High-energy Ion Implanter

SOPHI-400

SOPHI-400 is a cluster-type, high-energy ion implanter applicable to 2400 keV.





Features

Cluster type.

Thin wafers Compatible.

Parallel beam.

High energy: 2400 keV.

Wafer size: up to 200mm.

   

Applications

Power device manufacturing process, IGBT.

     



Contact us for more product information and specifications.

  




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