High-energy Ion Implanter
SOPHI-400
SOPHI-400 is a cluster-type, high-energy ion implanter applicable to 2400 keV.
SOPHI-400 is a cluster-type, high-energy ion implanter applicable to 2400 keV.
Cluster type. |
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Thin wafers Compatible. |
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Parallel beam. |
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High energy: 2400 keV. |
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Wafer size: up to 200mm. |
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Power device manufacturing process, IGBT. |
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