Low-acceleration and High-density Ion Implanter

SOPHI-30

SOPHI-30, cluster-type low-acceleration and high-density ion implanter has no mass separator and supports thin wafers.





Features

Cluster type

Thin wafer compatible.

No mass separator.

Advantages

High throughput ion implanter with low acceleration and high density.

Half price as compared to conventional implanter.

⅓ the footprint of conventional implanter.

   

Applications

Power device manufacturing process, IGBT.

Wafer size: Up to 200mm.

     



Contact us for more product information and specifications.

  




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