Damage-free (remote plasma and low-temperature process)

High throughput and low TCO.

Processing in batches of fifty wafers.

Superior uniformity of etching (5% or less per batch).

Easy maintenance.

Small footprint compare to cluster-type equipment.

50% lower self-aligned contact resistance compared to the current wet process.

The Smallest footprint.

Pre-cleaning for self-aligned contact (SAC) formation.

Pre-cleaning for capacitor formation.

Pre-cleaning for epitaxial growth.