ICP type etching chamber, CCP or Ashing chamber is also selectable as 2nd chamber.

Low process pressure, high-density plasma, low electron temperature are perfect for quartz glass, Pyrex, LN, LT, etc.

Good profile control and surface roughness.

Good performance of deep SiO₂ etching with PR.

High etching rate of Quartz > 1µm/min, Pyrex > 0.8 µm/min.

Excellent uniformity control.

Optical Devices (Wave guide, amplifier, optical switch etc), Micro lens, Photonics, µ-TAS etc.