In addition to ICP type chamber, NLD plasma etching chamber, Ashing chamber or CCP chamber can be selected.

Thanks to STAR Electrode (ULVAC Patent) and various temperature control functions, good process repeatability and stability can be achieved.

Low downtime thanks to a simple maintenance structure.

Full process support from ULVAC Institute for Semiconductor and Electronics Technologies.

Compound semiconductors (LED, LD and RF devices), Power devices (IGBT, SiC).

Metal, Dielectric, Polymer, Gate electrode etching.

Ferroelectric material, Noble metal etching.

Ferromagnetic material etching.