Cluster-type PE-CVD System


CME-200E/400 is the most suitable model in the PE-CVD series production system for the deposition of Si films with the application as insulator or barrier layers.


High-density plasma process with high-frequency (27.12 MHz) power supply.

High-quality film using SiH4 precursor: SiO2, SiNx, SiON, α-Si, also for TEOS process for SiO2 film.

Chamber Cleaning with NF3+Ar plasma.

Supports the heater for low-temperature deposition of organic EL.

Substrate size up to 200 x 200mm for CME-200E, Max. 300 x 400mm for CME-400.



Power devices

LED, LD and high-speed devices.

Organic LED

Solar cell



Contact us for more product information and specifications.


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