Cluster-type PE-CVD System
CME-200E/400
CME-200E/400 is the most suitable model in the PE-CVD series production system for the deposition of Si films with the application as insulator or barrier layers.
CME-200E/400 is the most suitable model in the PE-CVD series production system for the deposition of Si films with the application as insulator or barrier layers.
High-density plasma process with high-frequency (27.12 MHz) power supply. |
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High-quality film using SiH4 precursor: SiO2, SiNx, SiON, α-Si, also for TEOS process for SiO2 film. |
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Chamber Cleaning with NF3+Ar plasma. |
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Supports the heater for low-temperature deposition of organic EL. |
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Substrate size up to 200 x 200mm for CME-200E, Max. 300 x 400mm for CME-400. |
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Power devices |
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LED, LD and high-speed devices. |
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Organic LED |
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Solar cell |
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MEMS |
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