Load-lock Type Plasma-CVD System

CC-200

CC-200 is a compact and easy-to-use system for Research and Development use and production.





Features

High-density plasma process on 27.12MHz

Supports the deposition of SiH4 (SiO2, SiNx, SiON, α-Si) and TEOS (SiO2).

Supports chamber cleaning by CF4+O2 plasma.

Supports the heater for low-temperature deposition of organic EL.

Supports various substrate sizes.

Vacuum box-enabled indirect sequential processing within C-series (Sputter : CS-200, Evaporation : CV-200).

   

Applications

Power devices.

Compound-related devices of LED, LD and high-speed devices.

Organic EL system for R&D use.

Solar battery system for R&D use.

MEMS.

     



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